Graduate School Lectures in

Superconduttivita', Sistemi fortemente correlati, Eterostrutture e loro applicazioni

NANOSCALE TRANSISTORS

Prof. Antonio Di Bartolomeo

Universita` di Salerno


Calendar

 5/5/25 - 15:00/17:00 Room Lab. 7 - Esperienze di Elettronica - Title: Landauer Approach to Electron Transport
 6/5/25 - 14:00/17:00 Room Lab. 7 - Esperienze di Elettronica - Title: Metal-Oxide-Semiconductor Structures
 7/5/25 - 14:00/17:00 Room Lab. 7 - Esperienze di Elettronica - Title: Metal-Oxide-Semiconductor Field-Effect Transistors
 8/5/25 - 15:00/17:00 Room Lab. 7 - Esperienze di Elettronica - Title: Metal-Source-Drain and Tunnel Field-Effect Transistors

In this course, we apply electrostatics and quantum charge transport in semiconductors to understand the characteristics of unipolar field-effect transistors (FETs). We begin with a review of the Landauer approach to electron transport and the properties of metal-oxide-semiconductor (MOS) structures. Next, we focus on ballistic FETs, where electrons travel from source to drain without scattering, using nanowire transistors as a case study. We will highlight the various quantum limits of performance that guide the optimal selection of semiconductor and dielectric materials, as well as device geometry, to achieve the highest performance. Finally, we will conclude with an introduction to Schottky-barrier and tunnel FETs.

Landauer Approach to Electron Transport (2h)
• Current flow
• Quasi-classical approach
• Landauer formalism
• Multimode transport

Metal-Oxide-Semiconductor Structures (3h)
• Metal-oxide-semiconductor capacitor
• Depletion capacitance
• Interface-state capacitance
• Quantum capacitance
• Accumulation capacitance
• Gate dielectric with a high dielectric constant
• Metal-semiconductor contacts
• Fermi level pinning

Metal-Oxide-Semiconductor Field-Effect Transistors (3h)
• Nanoscale transistors with ballistic transport—From 1D to 2D to bulk MOSFETs
• Top-of-the-barrier model
• Off-state and on-state. Output and transfer characteristics.
• Optimizing the performance of MOSFETs
• A model for electrostatics
• Scaling and appearance of short-channel effects

Metal-Source-Drain and Tunnel Field-Effect Transistors (2h)
• Operating principles of Schottky-barrier FETs
• Off-state and on-state of SB-FETs
• Reconfigurable devices
• Band-to-band tunnel field-effect transistor
• Operating principle of TFET—off-state and on-state

Textbooks:
J. Knoch, Nanoelectronics, DeGruyter
M. Lundstrom, Fundamentals of Nanotransistors, Wiley
D. Jena, Quantum Physics of semiconductor Materials and Devices, Oxford University Press